Title :
Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET
Author :
Gwan Min Yoo ; Jae Hwa Seo ; Young Jun Yoon ; Young Jae Kim ; Sung Yoon Kim ; Hye Su Kang ; Hye Rim Eun ; Ra Hee Kwon ; Young In Jang ; In Man Kang ; Seong Min Lee ; Seongjae Cho
Author_Institution :
Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
In this work, dependence of device performances on AlGaN/GaN heterostructure recessed-gate fin-shaped-channel field-effect transistor (FinFET), as a power transistor, on the fin dimensions is closely investigated. On-state (Ion) and off-state (Ioff) currents are affected by fin geometry and the former showed a more drastic change (250~1209 mA/mm) compared with the latter (confined to ~1×10-12 mA/mm order). The design works have been conducted through a three-dimensional (3-D) technology computer-aided design (TCAD).
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; nanoelectronics; power transistors; technology CAD (electronics); wide band gap semiconductors; 3D technology computer-aided design; AlGaN-GaN; TCAD; fin dimensions; fin geometry; fin-shaped-channel field-effect transistor; heterostructure recessed-gate nanoscale FinFET; power transistor; Aluminum gallium nitride; FinFETs; Gallium nitride; HEMTs; Logic gates; MODFETs; Performance evaluation; 3-D TCAD; FinFET; GaN; fin design; fin-shaped channel; heterostructures; power transistor; recessed gate;
Conference_Titel :
Consumer Electronics (ISCE 2014), The 18th IEEE International Symposium on
Conference_Location :
JeJu Island
DOI :
10.1109/ISCE.2014.6884475
