Thin film low voltage RF MEMS shunt capacitive switches using AlN dielectric

Author

Mahesh, A. ; Pathak, Jyotishman

Author_Institution

Dept. of ECE, Lovely Prof. Univ., Phagwara, India

fYear

2014

fDate

12-13 July 2014

Firstpage

529

Lastpage

532

Abstract

In this paper the proposed design of RF MEMS capacitive switch is made of thin film of Au membrane and dielectric material of AlN. The advantages of using AlN as dielectric material rather than Si₃N₄, SiO₂, Barium Strontium Titanate (BST) and HfO₂ in terms of isolation and insertion loss are extensively discussed in paper. Actuation voltage required for the design is very low (4V), insertion loss of ~0.0854dB and isolation of ~30.5dB can achievable from this model. In above three aspects AlN is giving better performance than other dielectric materials.

Keywords

III-V semiconductors; aluminium compounds; gold; high-k dielectric thin films; isolation technology; low-power electronics; microswitches; semiconductor switches; semiconductor thin films; wide band gap semiconductors; AIN dielectric material; AlN; Au; RF MEMS capacitive switch; gold membrane; insertion loss; isolation; thin film low voltage RF MEMS; voltage 4 V; Educational institutions; Materials; Micromechanical devices; Springs; Strontium; Switches; Switching circuits; AlN; Dielectric material variation; High Isolation;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Propagation and Computer Technology (ICSPCT), 2014 International Conference on

Conference_Location

Ajmer

Print_ISBN

978-1-4799-3139-2

Type

conf

DOI

10.1109/ICSPCT.2014.6884955

Filename

6884955