Thin film low voltage RF MEMS shunt capacitive switches using AlN dielectric

In this paper the proposed design of RF MEMS capacitive switch is made of thin film of Au membrane and dielectric material of AlN. The advantages of using AlN as dielectric material rather than Si₃N₄, SiO₂, Barium Strontium Titanate (BST) and HfO₂ in terms of isolation and insertion loss are extensively discussed in paper. Actuation voltage required for the design is very low (4V), insertion loss of ~0.0854dB and isolation of ~30.5dB can achievable from this model. In above three aspects AlN is giving better performance than other dielectric materials.