Radiation effects of HBTs technology and design of analog multiplier

Hetero Junction Bipolar Transistor (HBT) technology has been developed as a significant technology for both wired and wireless application for its excellent performance in Analog and RF application and compatibility with CMOS process. The study of radiation effect of HBT technology is very important to spacecraft designers to introduce the latest technology into the system. In this paper, the Radiation hardens characteristics of SiGe HBTs as well as III-V based material HBTs are measured in rad/s. The characteristics are compared in with and without radiation for different doses of alpha particle and the influences on above device are investigated. The correlation between base and collector current in SiGe and III-V based material HBTs are established to reduce radiation impact. In this paper, the same HBTs technologies are used to design analog multiplier using a high speed low voltage Emitter Coupled Logic (ECL) inverters. A positive feedback has been introduced to increase the operating range and reduced the supply voltage requirement and the results on different technology platform are reported.