Title :
Room Temperature Single Electron Transistor Model Optimization Based on Ordered Mesoporous Membrane
Author_Institution :
Hebei Univ. of Sci. & Technol., Shijiazhuang, China
Abstract :
Based on the actual characteristic of ordered mesoporous membrane temperature single electron transistor, from two aspects of modeling of the very small size coulomb island single electron transistor and multi-island single electron transistor, the optimization of the existing single electron transistor semi-classical model is worked out, which lays a theoretical foundation for the design and simulation of room temperature single electron transistor.
Keywords :
mesoporous materials; single electron transistors; multi-island transistor; ordered mesoporous membrane; room temperature single electron transistor model optimization; semiclassical model; temperature 293 K to 298 K; very small size coulomb island transistor; Integrated circuit modeling; Logic gates; Mesoporous materials; Optimization; Single electron transistors; Solid modeling; Tunneling; ordered mesoporous membrane; room temperature; single electron transistor;
Conference_Titel :
Intelligent Computation Technology and Automation (ICICTA), 2014 7th International Conference on
Conference_Location :
Changsha
Print_ISBN :
978-1-4799-6635-6
DOI :
10.1109/ICICTA.2014.154
