Power dissipation effects on 28nm FPGA-based System on Chips neutron sensitivity

Author

Bruni, G. ; Rech, P. ; Tambara, L. ; Nazar, G.L. ; Kastensmidt, F.L. ; Reis, R. ; Paccagnell, A.

Author_Institution

Dipt. di Eletron. e Inf., Padova Univ., Padua, Italy

fYear

2014

fDate

6-8 Oct. 2014

Firstpage

1

Lastpage

6

Abstract

Modern System on Chips (SoCs) and embedded electronic devices work at very high frequencies, which have the countermeasure of increasing the power dissipation and, consequently, the silicon die temperature. The presented radiation experiments on a 28nm FPGA-based SoC demonstrate that the temperature variation caused by a higher operating frequency affects the FPGA configuration memory cross section. An evaluation and discussion of the observed reliability dependence on power dissipation effects on practical application is also presented.

Keywords

field programmable gate arrays; neutrons; sensitivity analysis; system-on-chip; FPGA configuration memory cross section; SoC; embedded electronic device; power dissipation effect; radiation experiment; silicon die temperature; size 28 nm; system on chip neutron sensitivity; Field programmable gate arrays; Heating; Ocean temperature; Power dissipation; System-on-chip; Temperature measurement; Temperature sensors; FPGa; Power Dissipation; Radiation Sensitivity; System On Chips; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Very Large Scale Integration (VLSI-SoC), 2014 22nd International Conference on

Conference_Location

Playa del Carmen

Type

conf

DOI

10.1109/VLSI-SoC.2014.7004195

Filename

7004195