DocumentCode
17917
Title
74 GHz, 17.2 dBm power amplifier in 45 nm SOI CMOS
Author
Tai, Wei-Hsiu ; Ricketts, David S.
Author_Institution
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume
49
Issue
12
fYear
2013
fDate
June 6 2013
Firstpage
758
Lastpage
759
Abstract
A millimetre-wave power amplifier (PA) fabricated in 45 nm SOI CMOS is reported that achieves 17.2 dBm saturated output power at 74 GHz without power combining using a 2.2 V supply, over twice the output power of previously reported single CMOS PAs. The peak gain and PAE are 14.3 dB and 11.1%, respectively. The PA also achieves a 3 dB bandwidth of 31 GHz while occupying a small die area of 0.23 mm2.
Keywords
CMOS integrated circuits; field effect MIMIC; millimetre wave power amplifiers; silicon-on-insulator; SOI CMOS; Si; bandwidth 31 GHz; frequency 74 GHz; millimetre-wave power amplifier; single CMOS power amplifier; size 45 nm; voltage 2.2 V;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.1052
Filename
6550141
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