Title :
Effect of AlOx inserting layer on Cu/VOx/TiN RRAM devices performance
Author :
Xiwen Hu ; Wenke Cheng ; Yuchen Wang ; Xue Guan ; Kuo Sun ; Fang Wang ; Baolin Wang ; Yinping Miao ; Kailiang Zhang
Author_Institution :
Sch. of Electron. Inf. Eng., Univ. of Technol., Tianjin, China
Abstract :
In this paper, a low power resistive switching memory (RRAM) device with Cu/VOx/AlOx/TiN stack structure is demonstrated. We studied the impact of different thicknesses of AlOx film on the Cu/VOx/AlOx/TiN RRAM device. With the increasing of AlOx thickness, the resistance of pristine state gets higher. Higher resistance of high resistive states (RHRS) (up to 109Ω), lower reset current of 40μA and lower operation voltage could be obtained after inserting AlOx film. Compared with the Cu/VOx/TiN structure, the Cu/VOx/AlOx/TiN stack structure showed better electrical properties. Therefore, this kind of method to insert AlOx between resistive layer and electrode would have a broader application prospect in the field of RRAM.
Keywords :
aluminium compounds; copper; electrical resistivity; low-power electronics; random-access storage; titanium compounds; vanadium compounds; AlOx film thickness; Cu-VOx-AlOx-TiN; RRAM; current 40 muA; electrode; high resistive states; low power resistive switching memory device; lower operation voltage; lower reset current; pristine state resistance; resistive layer; Educational institutions; Electrodes; Films; Power demand; Resistance; Switches; Tin; AlOx; RRAM; low power consumption; stack structure;
Conference_Titel :
Mechatronics and Automation (ICMA), 2014 IEEE International Conference on
Conference_Location :
Tianjin
Print_ISBN :
978-1-4799-3978-7
DOI :
10.1109/ICMA.2014.6885723
