DocumentCode
1791917
Title
Displacement Damage Testing Results for Intersil Bipolar and BiCMOS Analog Parts
Author
van Vonno, N.W. ; Shick, J.E. ; Traynham, P.W. ; Ballou, F.C. ; Gill, J.S.
Author_Institution
Precision Products, Intersil Corp., Palm Bay, FL, USA
fYear
2014
fDate
14-18 July 2014
Firstpage
1
Lastpage
5
Abstract
We summarize the results of 1MeV neutron displacement damage (DD) testing of several Intersil bipolar and BiCMOS analog and power management functions, including voltage references, comparators and point of load regulators.
Keywords
BiCMOS analogue integrated circuits; comparators (circuits); integrated circuit testing; reference circuits; BiCMOS analog functions; DD testing; Intersil bipolar functions; comparators; electron volt energy 1 MeV; load regulators; neutron displacement damage testing; power management functions; voltage references; BiCMOS integrated circuits; Field effect transistors; Neutrons; Propagation delay; Radiation effects; Resistance; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location
Paris
Print_ISBN
978-1-4799-5883-2
Type
conf
DOI
10.1109/REDW.2014.7004564
Filename
7004564
Link To Document