• DocumentCode
    1791932
  • Title

    Floating Gate P-MOS Radiation Sensor Charging Cycles Characterization

  • Author

    Cesari, J. ; Gomez, David ; Roca, M. ; Isern, E. ; Pineda, A. ; Garcia-Moreno, E.

  • Author_Institution
    iC-Malaga, Alaró, Spain
  • fYear
    2014
  • fDate
    14-18 July 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A recharging cycles characterization of a floating Gate PMOS radiation sensor is presented. The radiation sensor with an extra circuitry to emulate the radiation environment in order to discharge the floating gate has been tested using an automated measurement system. The sensor performance and reliability is analyzed after those tests.
  • Keywords
    CMOS integrated circuits; MOSFET; radiation detection; reliability; CMOS technology; automated measurement system; charging cycle characterization; floating gate P-MOS radiation sensor; floating gate discharge; recharging cycle characterization; reliability; Charge measurement; Degradation; Discharges (electric); MOSFET; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2014 IEEE
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-5883-2
  • Type

    conf

  • DOI
    10.1109/REDW.2014.7004572
  • Filename
    7004572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1791932