Title :
Floating Gate P-MOS Radiation Sensor Charging Cycles Characterization
Author :
Cesari, J. ; Gomez, David ; Roca, M. ; Isern, E. ; Pineda, A. ; Garcia-Moreno, E.
Author_Institution :
iC-Malaga, Alaró, Spain
Abstract :
A recharging cycles characterization of a floating Gate PMOS radiation sensor is presented. The radiation sensor with an extra circuitry to emulate the radiation environment in order to discharge the floating gate has been tested using an automated measurement system. The sensor performance and reliability is analyzed after those tests.
Keywords :
CMOS integrated circuits; MOSFET; radiation detection; reliability; CMOS technology; automated measurement system; charging cycle characterization; floating gate P-MOS radiation sensor; floating gate discharge; recharging cycle characterization; reliability; Charge measurement; Degradation; Discharges (electric); MOSFET; Temperature measurement; Temperature sensors;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location :
Paris
Print_ISBN :
978-1-4799-5883-2
DOI :
10.1109/REDW.2014.7004572
