Title :
Investigation of the Cosine Law for Lateral Power MOSFETs
Author :
Scheick, Leif Z. ; Edmonds, Larry
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The results of recent Single Event Effect (SEE) testing of newly available power MOSFETs are presented.
Keywords :
power MOSFET; radiation hardening (electronics); semiconductor device testing; SEE testing; cosine law; lateral power MOSFETs; single event effect; Conferences; Ions; Logic gates; MOSFET; Radiation effects; Testing; Xenon;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location :
Paris
Print_ISBN :
978-1-4799-5883-2
DOI :
10.1109/REDW.2014.7004575
