Title :
Radiation Effects Characterization of a High Density SSRAM
Author :
Hafer, C. ; Mabra, J. ; Mnich, C. ; Leslie, M. ; Jordan, A.
Abstract :
A high density 64/80/96-Mbit SSRAM has been designed, manufactured, and characterized for radiation effects. The device is SEL immune, has an error rate less than 1x10-15 errors/bit-day, and is TID tolerant to 100 krad(Si).
Keywords :
SRAM chips; radiation hardening (electronics); SEL; TID; bit rate 64 Mbit/s; bit rate 80 Mbit/s; bit rate 96 Mbit/s; error rate; high density SSRAM; radiation effects characterization; total ionizing dose; Oscillators; Phase locked loops; Radiation effects; Single event upsets; Synchronization; Xenon;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location :
Paris
Print_ISBN :
978-1-4799-5883-2
DOI :
10.1109/REDW.2014.7004581
