DocumentCode :
1791973
Title :
Single Event Effects Characterization of Texas Instruments ADC12D1600CCMLS, 12 Bit, 3.2 GSPS Analog-to-Digital Converter with Static and Dynamic Inputs
Author :
Kruckmeyer, Kirby ; Thang Trinh
Author_Institution :
Texas Instrum., Santa Clara, CA, USA
fYear :
2014
fDate :
14-18 July 2014
Firstpage :
1
Lastpage :
7
Abstract :
Texas Instruments´ ADC12D1600CCMLS is a dual channel, 12b Analog-to-Digital Converter that can support conversion rates up to 1.6 gigasamples per second (GSPS). The two channels can be seamlessly interleaved for conversion rates up to 3.2 GSPS. The device was put through heavy ion testing and was monitored for Single Event Latch-up, Single Event Functional Interrupt and Single Event Upset (SEU). Testing was done at two different ion energies and the impact of ion energy on SEU response is evaluated. SEU testing was performed with both static and dynamic inputs and the SEU signatures of each are compared.
Keywords :
analogue-digital conversion; radiation hardening (electronics); SEU testing; Texas Instruments ADC12D1600CCMLS; analog-to-digital converter; conversion rates; dynamic inputs; heavy ion testing; ion energy; single event effects characterization; single event functional interrupt; single event latch-up; single event upset; static inputs; word length 12 bit; Clocks; Monitoring; Registers; Single event upsets; Temperature measurement; Temperature sensors; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location :
Paris
Print_ISBN :
978-1-4799-5883-2
Type :
conf
DOI :
10.1109/REDW.2014.7004591
Filename :
7004591
Link To Document :
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