Title :
Single Event Effects in Power MOSFETs and IGBTs Due to 14 MeV and 25 meV Neutrons
Author :
Lambert, Damien ; Desnoyers, Francois ; Thouvenot, Didier ; Azais, Bruno
Author_Institution :
Nucletudes, Les Ulis, France
Abstract :
Single Event Effect (SEE) characterizations under 14 MeV and 25 meV neutrons are presented for various commercial power electronic components: power metal-oxide-semiconductor field effect transistors (MOSFET) and insulated gate bipolar transistors (IGBT).
Keywords :
insulated gate bipolar transistors; power MOSFET; radiation hardening (electronics); IGBT; SEE characterizations; commercial power electronic components; electron volt energy 14 MeV; electron volt energy 25 meV; insulated gate bipolar transistors; power MOSFET; power metal-oxide-semiconductor field effect transistors; single event effects; Aerospace electronics; Guidelines; Insulated gate bipolar transistors; MOSFET; Neutrons; Safety; Standards;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location :
Paris
Print_ISBN :
978-1-4799-5883-2
DOI :
10.1109/REDW.2014.7004592
