DocumentCode :
1791992
Title :
TID and SEE Characterization of Rad-Hardened 1.2GHz PLL IP from New ST CMOS 65nm Space Technology
Author :
Malou, Florence ; Gasiot, Gilles ; Chevallier, Remy ; Dugoujon, Laurent ; Roche, Philippe
Author_Institution :
Environ. & New Components, Centre Nat. d´Etudes Spatiales (CNES), Toulouse, France
fYear :
2014
fDate :
14-18 July 2014
Firstpage :
1
Lastpage :
8
Abstract :
We present Single Event Effects characterization and Total Ionizing Dose behavior up to 300 krad(Si) on Rad-Hardened 1.2GHz PLL IP and cold-spare I/O from new ST CMOS 65nm space technology.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; industrial property; phase locked loops; radiation hardening (electronics); SEE characterization; ST CMOS space technology; TID characterization; cold-spare I-O; frequency 1.2 GHz; intellectual property; phase-locked loop; rad-hardened PLL IP; CMOS integrated circuits; CMOS technology; Clocks; Phase locked loops; Protons; Standards; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location :
Paris
Print_ISBN :
978-1-4799-5883-2
Type :
conf
DOI :
10.1109/REDW.2014.7004601
Filename :
7004601
Link To Document :
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