DocumentCode :
1792410
Title :
Power-penalty comparison of push-pull and traveling-wave electrode Silicon Mach-Zehnder modulators
Author :
Latchu, T. ; Pochet, M. ; Usechak, Nicholas G. ; DeRose, Christopher ; Lentine, Anthony ; Trotter, Douglas C. ; Zortman, W.
Author_Institution :
US Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
fYear :
2014
fDate :
4-7 May 2014
Firstpage :
25
Lastpage :
26
Abstract :
Power-penalty measurements on two Si Mach-Zehnder modulator designs, each compatible with standard CMOS processing, were performed. The results highlight the power penalty and bandwidth advantages of the traveling-wave electrode design over a push-pull single-electrode design.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated optics; optical design techniques; optical modulation; optical variables measurement; power measurement; silicon; CMOS processing; Si; bandwidth; power-penalty measurements; push-pull electrode silicon Mach-Zehnder modulator designs; traveling-wave electrode silicon Mach-Zehnder modulator designs; Bandwidth; Electrodes; Erbium; High-speed optical techniques; Modulation; Optical fiber amplifiers; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Interconnects Conference, 2014 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4799-2467-7
Type :
conf
DOI :
10.1109/OIC.2014.6886061
Filename :
6886061
Link To Document :
بازگشت