• DocumentCode
    1792410
  • Title

    Power-penalty comparison of push-pull and traveling-wave electrode Silicon Mach-Zehnder modulators

  • Author

    Latchu, T. ; Pochet, M. ; Usechak, Nicholas G. ; DeRose, Christopher ; Lentine, Anthony ; Trotter, Douglas C. ; Zortman, W.

  • Author_Institution
    US Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
  • fYear
    2014
  • fDate
    4-7 May 2014
  • Firstpage
    25
  • Lastpage
    26
  • Abstract
    Power-penalty measurements on two Si Mach-Zehnder modulator designs, each compatible with standard CMOS processing, were performed. The results highlight the power penalty and bandwidth advantages of the traveling-wave electrode design over a push-pull single-electrode design.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; integrated optics; optical design techniques; optical modulation; optical variables measurement; power measurement; silicon; CMOS processing; Si; bandwidth; power-penalty measurements; push-pull electrode silicon Mach-Zehnder modulator designs; traveling-wave electrode silicon Mach-Zehnder modulator designs; Bandwidth; Electrodes; Erbium; High-speed optical techniques; Modulation; Optical fiber amplifiers; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Interconnects Conference, 2014 IEEE
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-4799-2467-7
  • Type

    conf

  • DOI
    10.1109/OIC.2014.6886061
  • Filename
    6886061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1792410