• DocumentCode
    1792417
  • Title

    Gallium arsenide photonic crystal devices for fast integrated optical networks

  • Author

    Bose, Ranjan ; Pelc, Jason ; Santori, Charles ; Beausoleil, Raymond G.

  • Author_Institution
    Hewlett-Packard Labs., Palo Alto, CA, USA
  • fYear
    2014
  • fDate
    4-7 May 2014
  • Firstpage
    31
  • Lastpage
    32
  • Abstract
    We will present our experimental measurements of fast carrier-based dynamics in GaAs photonic crystal cavities at room temperature, and discuss how these devices can be integrated on chip for optical networking.
  • Keywords
    III-V semiconductors; gallium arsenide; high-speed optical techniques; integrated optics; nonlinear optics; optical variables measurement; GaAs; fast carrier-based dynamic measurements; fast integrated optical networks; gallium arsenide photonic crystal cavities; temperature 293 K to 298 K; Cavity resonators; Gallium arsenide; Laser excitation; Measurement by laser beam; Optical resonators; Pump lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Interconnects Conference, 2014 IEEE
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-4799-2467-7
  • Type

    conf

  • DOI
    10.1109/OIC.2014.6886064
  • Filename
    6886064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1792417