Title :
Gallium arsenide photonic crystal devices for fast integrated optical networks
Author :
Bose, Ranjan ; Pelc, Jason ; Santori, Charles ; Beausoleil, Raymond G.
Author_Institution :
Hewlett-Packard Labs., Palo Alto, CA, USA
Abstract :
We will present our experimental measurements of fast carrier-based dynamics in GaAs photonic crystal cavities at room temperature, and discuss how these devices can be integrated on chip for optical networking.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; integrated optics; nonlinear optics; optical variables measurement; GaAs; fast carrier-based dynamic measurements; fast integrated optical networks; gallium arsenide photonic crystal cavities; temperature 293 K to 298 K; Cavity resonators; Gallium arsenide; Laser excitation; Measurement by laser beam; Optical resonators; Pump lasers;
Conference_Titel :
Optical Interconnects Conference, 2014 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4799-2467-7
DOI :
10.1109/OIC.2014.6886064
