Title :
Low temperature bonding for 3D
Author_Institution :
Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Chemical interactions exist always between atoms on mated solids as the nature of solid surface. These interactions are origin of the adhesion energy between solids. It means that any solid materials should be bonded even if there is neither high temperature reaction nor diffusion process. This is the idea on which the surface activated bonding (SAB) at room temperature is based. Recent development of the SAB combining several processes of the surface activation provides a bridge to the conventional wafer bonding technique for bonding in ambient atmosphere.
Keywords :
adhesion; surface treatment; three-dimensional integrated circuits; wafer bonding; 3D integrated circuits; adhesion energy; low temperature bonding; surface activated bonding; wafer bonding technique; Bonding; Metals; Silicon; Solids; Surface treatment; Wafer bonding;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886141
