Title :
Three dimensional dynamic random access memory
Author :
Kirihata, Toshiaki
Author_Institution :
IBM Syst. & Technol. Group, Hopewell Junction, NY, USA
Abstract :
We review high-density embedded 3D DRAM cache, industry 3D stacked DDR3 and wide IO mobile DRAM along with more recent Hybrid-Memory Cube (HMC) and High-Bandwidth Memory (HBM).
Keywords :
DRAM chips; cache storage; three-dimensional integrated circuits; high-bandwidth memory; high-density embedded 3D DRAM cache; hybrid-memory cube; industry 3D stacked DDR3; three dimensional dynamic random access memory; wide IO mobile DRAM; Cache memory; Industries; Junctions; Random access memory; Research and development; Stacking; Three-dimensional displays;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886142
