Title :
Mechanical grinding of Au/SiO2 hybrid-bonded substrates for 3D integrated image sensors
Author :
Hagiwara, Kazuki ; Goto, Misako ; Ohtake, H. ; Iguchi, Yoshinori ; Saraya, Takuya ; Toshiyoshi, Hiroshi ; Higurashi, Eiji ; Hiramoto, Toshiro
Author_Institution :
Sci. & Technol. Res. Labs., NHK, Tokyo, Japan
Abstract :
Mechanical grinding is utilized to thin the backside Si layer of Au/SiO2 hybrid-bonded substrates. Due to the high bond strength after the surface activation treatment, the Si layer thickness could be reduced to 35 μm without chipping. The proposed approach is highly promising for the fabrication of three-dimensional integrated image sensors.
Keywords :
CMOS integrated circuits; gold; grinding; integrated circuit bonding; silicon compounds; surface treatment; three-dimensional integrated circuits; 3D integrated image sensors; Au-SiO2; backside silicon layer; high bond strength; high-definition CMOS image sensors; hybrid-bonded substrates; mechanical grinding; surface activation treatment; three-dimensional integrated image sensors; Bonding; Educational institutions; Gold; Image sensors; Silicon; Substrates; Three-dimensional displays;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886150
