Mechanical grinding of Au/SiO2 hybrid-bonded substrates for 3D integrated image sensors

Author

Hagiwara, Kazuki ; Goto, Misako ; Ohtake, H. ; Iguchi, Yoshinori ; Saraya, Takuya ; Toshiyoshi, Hiroshi ; Higurashi, Eiji ; Hiramoto, Toshiro

Author_Institution

Sci. & Technol. Res. Labs., NHK, Tokyo, Japan

fYear

2014

fDate

15-16 July 2014

Firstpage

11

Lastpage

11

Abstract

Mechanical grinding is utilized to thin the backside Si layer of Au/SiO₂ hybrid-bonded substrates. Due to the high bond strength after the surface activation treatment, the Si layer thickness could be reduced to 35 μm without chipping. The proposed approach is highly promising for the fabrication of three-dimensional integrated image sensors.

Keywords

CMOS integrated circuits; gold; grinding; integrated circuit bonding; silicon compounds; surface treatment; three-dimensional integrated circuits; 3D integrated image sensors; Au-SiO₂; backside silicon layer; high bond strength; high-definition CMOS image sensors; hybrid-bonded substrates; mechanical grinding; surface activation treatment; three-dimensional integrated image sensors; Bonding; Educational institutions; Gold; Image sensors; Silicon; Substrates; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4799-5260-1

Type

conf

DOI

10.1109/LTB-3D.2014.6886150

Filename

6886150