Via-last/backside-via 3D integration using a visible-light laser debonding technique

Author

Fukushima, Tetsuya ; Mariappan, Muralindran ; Bea, J.-C. ; Hashimoto, Hiroya ; Sato, Yuuki ; Motoyoshi, Mizuki ; Lee, Ki-Won ; Koyanagi, Mitsumasa

Author_Institution

New Ind. Creation Hatchery Center (NICHe), Tohoku Univ., Sendai, Japan

fYear

2014

fDate

15-16 July 2014

Firstpage

13

Lastpage

13

Abstract

A visible-light laser debonding technique is introduced for via-last/backside-via 3D integration. Temporary bonding of 12-inch wafers with a temporary glue and the subsequent wafer thinning processes give small TTV within 1 μm by using an auto-TTV functions. Cu-TSV daisy chains with TSV diameters of 5 μm are formed in 50-μm-thick thinned Si wafers.

Keywords

copper; elemental semiconductors; integrated circuit interconnections; laser materials processing; silicon; three-dimensional integrated circuits; vias; wafer bonding; Cu; Cu-TSV daisy chains; Si; TSV diameters; size 12 inch; size 5 mum; size 50 mum; via-last/backside-via 3D integration; visible-light laser debonding technique; wafer thinning processes; Bonding; Glass; Lasers; Silicon; Three-dimensional displays; Through-silicon vias; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4799-5260-1

Type

conf

DOI

10.1109/LTB-3D.2014.6886152

Filename

6886152