• DocumentCode
    1792555
  • Title

    Highly thermoresistant temporary bonding/debonding system without organic adhesives for 3D integration

  • Author

    Hashiguchi, Hironori ; Fukushima, Tetsuya ; Murugesan, Mariappan ; Bea, J.-C. ; Kino, Hitoshi ; Lee, Ki-Won ; Tanaka, T. ; Koyanagi, Mitsumasa

  • Author_Institution
    Dept. of Bioeng. & Robot., Tohoku Univ., Sendai, Japan
  • fYear
    2014
  • fDate
    15-16 July 2014
  • Firstpage
    14
  • Lastpage
    14
  • Abstract
    This study introduces a highly thermoresistant temporary bonding/debonding system. Known Good Dies (KGDs) were bonded through SOG to a support wafer. The KGDs were thinned, and Cu-TSVs were formed by via-last/backside-via processes. These KGDs can be readily debonded from the wafer by excimer laser irradiation to the a-Si:H layer on the wafer.
  • Keywords
    elemental semiconductors; hydrogen; laser materials processing; silicon; three-dimensional integrated circuits; vias; wafer bonding; 3D integration; Cu; Cu-TSVs; Si:H; excimer laser irradiation; highly thermoresistant temporary bonding-debonding system; known good dies; via-last/backside-via processes; Biomedical engineering; Bonding; Glass; Laser ablation; Laser beams; Silicon; Three-dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4799-5260-1
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2014.6886153
  • Filename
    6886153