DocumentCode
1792555
Title
Highly thermoresistant temporary bonding/debonding system without organic adhesives for 3D integration
Author
Hashiguchi, Hironori ; Fukushima, Tetsuya ; Murugesan, Mariappan ; Bea, J.-C. ; Kino, Hitoshi ; Lee, Ki-Won ; Tanaka, T. ; Koyanagi, Mitsumasa
Author_Institution
Dept. of Bioeng. & Robot., Tohoku Univ., Sendai, Japan
fYear
2014
fDate
15-16 July 2014
Firstpage
14
Lastpage
14
Abstract
This study introduces a highly thermoresistant temporary bonding/debonding system. Known Good Dies (KGDs) were bonded through SOG to a support wafer. The KGDs were thinned, and Cu-TSVs were formed by via-last/backside-via processes. These KGDs can be readily debonded from the wafer by excimer laser irradiation to the a-Si:H layer on the wafer.
Keywords
elemental semiconductors; hydrogen; laser materials processing; silicon; three-dimensional integrated circuits; vias; wafer bonding; 3D integration; Cu; Cu-TSVs; Si:H; excimer laser irradiation; highly thermoresistant temporary bonding-debonding system; known good dies; via-last/backside-via processes; Biomedical engineering; Bonding; Glass; Laser ablation; Laser beams; Silicon; Three-dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4799-5260-1
Type
conf
DOI
10.1109/LTB-3D.2014.6886153
Filename
6886153
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