Title :
InAs/GaAs quantum dot lasers metal-stripe-bonded onto SOI substrate
Author :
Yuan-Hsuan Jhang ; Tanabe, Kazuki ; Iwamoto, Satoshi ; Arakawa, Yasuhiko
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrate with silicon rib structures by metal-stripe wafer bonding technology. The threshold current density of the bonded laser is 880 A/cm2, and the spectrum shows the lasing wavelength around 1.3 μm at room temperature.
Keywords :
III-V semiconductors; current density; elemental semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor quantum dots; silicon; silicon-on-insulator; wafer bonding; InAs-GaAs; SOI substrate; Si; bonded laser; metal-stripe wafer bonding technology; quantum dot laser metal-stripe; silicon rib structures; silicon-on-insulator substrate; temperature 293 K to 298 K; threshold current density; Gallium arsenide; Metals; Quantum dot lasers; Silicon; Substrates;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886157
