Title :
Large-scale Ge-on-Insulator wafers using low-temperature bonding and Epitaxial Lift-Off (ELO) technique
Author :
Mieda, E. ; Maeda, T. ; Yasuda, Toshiyuki ; Maeda, Atsushi ; Kurashima, Yuichi ; Takagi, Hiroyuki ; Aoki, Toyohiro ; Yamamoto, Takayuki ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Ashihara, H. ; Waseda, Takuji ; Yugami, J. ; Kikuchi, Takashi ;
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
We have realized patterned Ge-on-Insulator wafers by large-scale layer transfer technology. In conjunction with low-temperature bonding and patterned Epitaxial Lift-Off (ELO) technique, high quality Ge layer transfer was achieved in full-wafer scale.
Keywords :
elemental semiconductors; germanium; low-temperature techniques; semiconductor epitaxial layers; wafer bonding; ELO technique; full-wafer scale; large-scale germanium-on-insulator wafers; large-scale layer transfer technology; low-temperature bonding; patterned epitaxial lift-off technique; Bonding; Epitaxial growth; Gallium arsenide; Silicon; Substrates;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886161
