DocumentCode
1792576
Title
Room temperature direct bonding of Si wafers smoothed by Ne beam irradiation
Author
Kurashima, Yuichi ; Maeda, Atsushi ; Takagi, Hiroyuki
Author_Institution
Res. Center for Ubiquitous MEMS & Micro Eng. (UMEMSME), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear
2014
fDate
15-16 July 2014
Firstpage
24
Lastpage
24
Abstract
We found the improvement of the bonding strength by surface smoothing effect of Ne fast-atom-beam (FAB). Surface roughness of a Si wafer decreased from 0.40 to 0.17 nm rms by applying the Ne FAB etching of 30 nm depth. The bonding strength was largely improved by Ne FAB surface smoothing and finally became equivalent to Si bulk strength.
Keywords
elemental semiconductors; etching; laser beam effects; silicon; surface roughness; three-dimensional integrated circuits; wafer bonding; Ne; Ne FAB etching; Ne fast-atom-beam irradiation; Si; bonding strength; room temperature direct bonding; silicon bulk strength; silicon wafers; surface roughness; surface smoothing effect; temperature 293 K to 298 K; Bonding; Etching; Rough surfaces; Silicon; Surface roughness; Xenon;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4799-5260-1
Type
conf
DOI
10.1109/LTB-3D.2014.6886163
Filename
6886163
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