Improvement of thermoelectric TiZrNiSn thin films by contact layers

Author

Wunderlich, Wilfried ; Matsumura, Yoshiyuki

Author_Institution

Fac. Eng. Mat. Sci.. Dept., Tokai Univ., Hiratsuka, Japan

fYear

2014

fDate

15-16 July 2014

Firstpage

29

Lastpage

29

Abstract

The Half-Heusler alloy (Ti,Zr)NiSn has been reported [1-6] as one of the thermoelectric (TE) materials with large Seebeck coefficient. Thin films sputtered by magnetron-sputtering have better properties when they are deposited on Cu, rather than Fe, Ni or Si. This interface phenomenon is explained by band-structure calculations and guidelines for 3D-printer processing are provided.

Keywords

Seebeck effect; ab initio calculations; band structure; interface phenomena; nickel alloys; sputter deposition; thermoelectric devices; three-dimensional printing; tin alloys; titanium alloys; zirconium alloys; 3D-printer processing; Cu; Fe; Ni; Seebeck coefficient; Si; TiZrNiSn-Cu; TiZrNiSn-Fe; TiZrNiSn-Ni; TiZrNiSn-Si; band-structure calculations; contact layers; half-Heusler alloy; interface phenomenon; magnetron-sputtering; thermoelectric materials; thermoelectric thin films; Educational institutions; Guidelines; Magnetic films; Nickel; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4799-5260-1

Type

conf

DOI

10.1109/LTB-3D.2014.6886168

Filename

6886168