Title :
GaN on h-BN technology for release and transfer of nitride devices
Author :
Hiroki, Masanobu ; Kumakura, Kazuhide ; Kobayashi, Yoshiyuki ; Akasaka, Tetsuya ; Yamamoto, Hiroshi ; Makimoto, Toshiki
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Abstract :
We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.
Keywords :
III-V semiconductors; boron compounds; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; BN; HEMTs; InGaN-GaN; LEDs; copper plates; h-BN release layer; h-BN technology; improved heat dissipation; indium sheets; light emission performance degradation; nitride devices; sapphire substrates; self-heating effect; Copper; Gallium nitride; HEMTs; Light emitting diodes; MODFETs; Substrates;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886170
