DocumentCode
1792590
Title
GaN on h-BN technology for release and transfer of nitride devices
Author
Hiroki, Masanobu ; Kumakura, Kazuhide ; Kobayashi, Yoshiyuki ; Akasaka, Tetsuya ; Yamamoto, Hiroshi ; Makimoto, Toshiki
Author_Institution
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
fYear
2014
fDate
15-16 July 2014
Firstpage
31
Lastpage
31
Abstract
We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.
Keywords
III-V semiconductors; boron compounds; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; BN; HEMTs; InGaN-GaN; LEDs; copper plates; h-BN release layer; h-BN technology; improved heat dissipation; indium sheets; light emission performance degradation; nitride devices; sapphire substrates; self-heating effect; Copper; Gallium nitride; HEMTs; Light emitting diodes; MODFETs; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4799-5260-1
Type
conf
DOI
10.1109/LTB-3D.2014.6886170
Filename
6886170
Link To Document