Title :
Heterogeneous integration by wafer-to-wafer transfer technology
Author_Institution :
Dept. of Bioeng. & Robot., Tohoku Univ., Sendai, Japan
Abstract :
Laser-assisted selective die transfer for wafer-level integration and packaging between different sizes of dies was developed, and applied to a 2 GHz chip-size-packaged film bulk acoustic wave oscillator. Wafer-to-wafer thin film transfer by laser-assisted peeling and metal-metal bonding was developed and applied to a monolithic bandwidth tunable surface acoustic wave (SAW) filter for TV white space cognitive wireless LAN.
Keywords :
acoustic microwave devices; bulk acoustic wave devices; laser materials processing; microwave oscillators; surface acoustic wave filters; surface acoustic wave oscillators; three-dimensional integrated circuits; wafer bonding; wafer level packaging; wireless LAN; TV white space cognitive wireless LAN; film bulk acoustic wave oscillator; frequency 2 GHz; heterogeneous integration; laser-assisted peeling; laser-assisted selective die transfer; metal-metal bonding; monolithic bandwidth tunable surface acoustic wave filter; wafer-level integration; wafer-level packaging; wafer-to-wafer thin film transfer; Acoustic waves; Films; Lasers; Lithium compounds; Oscillators; Varactors;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886172
