Title :
Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging
Author :
Wu, Min ; Moulin, Johan ; Lani, S. ; Hallais, G. ; Renard, Christian ; Bosseboeuf, A.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris Sud, Orsay, France
Abstract :
Diffusion of Ti through a very thin Au cap layer has been studied at different temperatures and times by SEM, AFM, EDX, RBS and other techniques. Results show that Au/Ti with an ultrathin Au layer is a promising getter material for wafer-level vacuum packaging with an activation temperature ≤300°C.
Keywords :
Rutherford backscattering; X-ray chemical analysis; annealing; atomic force microscopy; chemical interdiffusion; diffusion bonding; getters; gold; metallic thin films; scanning electron microscopy; three-dimensional integrated circuits; titanium; wafer level packaging; AFM; Au-Ti; EDX; RBS; SEM; annealing; getter film integration; thermal interdiffusion; wafer-level vacuum packaging; Annealing; Films; Gettering; Gold; Packaging; Temperature measurement;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886174
