DocumentCode :
1792606
Title :
Cu/Cu direct bonding by metal salt generation bonding technique with organic acid and its persistence of reformed layer
Author :
Koyama, Shinji ; Hagiwara, Naoki ; Shohji, Ikuo
Author_Institution :
Grad. Sch. of Sci. & Technol., Gunma Univ., Kiryu, Japan
fYear :
2014
fDate :
15-16 July 2014
Firstpage :
40
Lastpage :
40
Abstract :
In this study, the effect of metal salt generation bonding method on the bonded strength of the solid-state direct bonded interface of copper was investigated. The specimen to be bonded was a block 15 mm × 15 mm × 5 mm cut from 99.9% ingot and a wire (99.9% purity) dimension of φ 1.2 mm. Copper surfaces were modified by boiling in several types of organic acid for predetermined time. Solid-state bonding was performed in a vacuum chamber at bonding temperature of 423-673 K under a pressure of 588 N (bonding time of 0.9 ks). As a result of metal salt generation bonding method, bonded joints were obtained at a bonding temperature 150 K (formic acid) and 100 K (citric acid) lower than that required for non-modified surfaces, and the bond strength was comparable to that of the maximum load. In addition, the durability of the modification effect was investigated by leaving the modified surface to an air atmosphere furnace which kept at 323 K. After the shelf test, solid-state bonding was performed. As a result of peel test, with increase of the shelf time, bond strength was not decreased even for 168 hours when it modified with citric acid, but bond strength decreased in several hours when it modified with formic acid.
Keywords :
copper; organic compounds; surface treatment; three-dimensional integrated circuits; wafer bonding; Cu; Cu-Cu direct bonding; bond strength; citric acid; formic acid; metal salt generation bonding technique; organic acid; shelf test; solid-state direct bonded copper interface; surface modification; temperature 423 K to 673 K; Bonding; Copper; Films; Joints; Plasma temperature; Surface cracks;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
Type :
conf
DOI :
10.1109/LTB-3D.2014.6886179
Filename :
6886179
Link To Document :
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