Title :
New bonding material for power devices with high bonding strength for operating high temperature
Author :
Sekine, S. ; Kimura, Ryuji ; Okada, Kenichi ; Shindo, Hiroaki ; Ooi, Tatsuya ; Itoh, Uichi
Author_Institution :
Napra Corp., Tokyo, Japan
Abstract :
In the metallization technology for power electronic device, it has been required to develop new material for operating high-temperature at 300 °C and interconnection with high bonding strength. We have developed new method to fabricate fine metal alloy particles with narrow distribution of particle size from 0.5 to 10μm. We called it as Nanomized method. The fine particles are composed of uniform structure dispersed metal alloy in nano-scale level and do not include void in the particle. We produced bonding material from the mixture of Cu particles and Sn-based nano composite solder particles. The bonding strength of die chip on Al electrode reached 80 MPa as a top data, 50 MPa in average after 500 thermal cycles from -40 to 250 °C.
Keywords :
copper; high-temperature electronics; integrated circuit bonding; integrated circuit metallisation; nanocomposites; nanoparticles; particle size; power integrated circuits; solders; tin; Cu-Sn; bonding material; die chip; fine metal alloy particles; high bonding strength; metallization technology; particle size distribution; power electronic device; size 0.5 mum to 10 mum; temperature 300 degC; tin-based nanocomposite solder particles; Bonding; Electrodes; Metallization; Power electronics; Silicon;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886188
