Title :
Directly bonded Ge/GaAs by surface activated bonding for high efficiency III–V multi-junction solar cells
Author :
Kono, Genki ; Fujino, Masahisa ; Yamashita, D. ; Watanabe, K. ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Suga, Takashi
Author_Institution :
Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Ge/GaAs wafers have been bonded by surface activated bonding. TEM observation of the bonded interface shows that amorphous layer with thickness of about 5 nm has been formed. I-V characteristic of directly bonded p-Ge/p-GaAs shows diode-like properties. The electrical resistance of the bonded interface has achieved about 0.16 Ωcm2 at 0.1 V.
Keywords :
III-V semiconductors; electrical resistivity; elemental semiconductors; gallium arsenide; germanium; semiconductor diodes; semiconductor heterojunctions; solar cells; surface treatment; three-dimensional integrated circuits; wafer bonding; Ge-GaAs; I-V characteristic; TEM observation; amorphous layer; bonded interface; diode-like properties; directly bonded wafers; electrical resistance; high efficiency III-V multijunction solar cells; surface activated bonding; voltage 0.1 V; Bonding; Gallium arsenide; Photovoltaic cells; Surface resistance; Surface treatment; Wafer bonding;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886189
