Directly bonded Ge/GaAs by surface activated bonding for high efficiency III–V multi-junction solar cells

Author

Kono, Genki ; Fujino, Masahisa ; Yamashita, D. ; Watanabe, K. ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Suga, Takashi

Author_Institution

Sch. of Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2014

fDate

15-16 July 2014

Firstpage

50

Lastpage

50

Abstract

Ge/GaAs wafers have been bonded by surface activated bonding. TEM observation of the bonded interface shows that amorphous layer with thickness of about 5 nm has been formed. I-V characteristic of directly bonded p-Ge/p-GaAs shows diode-like properties. The electrical resistance of the bonded interface has achieved about 0.16 Ωcm² at 0.1 V.

Keywords

III-V semiconductors; electrical resistivity; elemental semiconductors; gallium arsenide; germanium; semiconductor diodes; semiconductor heterojunctions; solar cells; surface treatment; three-dimensional integrated circuits; wafer bonding; Ge-GaAs; I-V characteristic; TEM observation; amorphous layer; bonded interface; diode-like properties; directly bonded wafers; electrical resistance; high efficiency III-V multijunction solar cells; surface activated bonding; voltage 0.1 V; Bonding; Gallium arsenide; Photovoltaic cells; Surface resistance; Surface treatment; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4799-5260-1

Type

conf

DOI

10.1109/LTB-3D.2014.6886189

Filename

6886189