Title :
Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells
Author :
Chai, Lu ; Liang, Justin ; Nishida, Shuichi ; Morimoto, Masayuki ; Shigekawa, Naoteru
Author_Institution :
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
Abstract :
Effects of annealing on bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. We observed amorphous layer at the interfaces prior to the annealing. We also investigated the effects of the annealing on the current-voltage characteristics of n+-GaAs/n++-Si and p+-GaAs/n++-Si junctions.
Keywords :
III-V semiconductors; annealing; elemental semiconductors; gallium arsenide; integrated circuit bonding; p-n heterojunctions; silicon; solar cells; three-dimensional integrated circuits; GaAs-Si; III-V-on-Si hybrid tandem solar cells; amorphous layer; annealing; bonding interfaces; current-voltage characteristics; Annealing; Bonding; Gallium arsenide; Junctions; Photovoltaic cells; Resistance; Silicon;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886190
