Title :
Annealing temperature dependence of SAB based Si/Si junctions
Author :
Morimoto, Masayuki ; Liang, Justin ; Nishida, Shuichi ; Chai Li ; Takemura, Kentaro ; Shigekawa, Naoteru
Author_Institution :
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
Abstract :
Effects of annealing on SAB based Si/Si junctions were investigated by TEM observation and current-voltage (I-V) measurement. We observed amorphous like layer at the Si/Si interface prior to the annealing, which seemed to vanish after the annealing at 1000 °C. The I-V characteristics of Si/Si junctions showed that the current decreased when the junctions were annealed at comparatively lower temperatures. The current increased when the junctions were annealed at higher temperatures.
Keywords :
annealing; elemental semiconductors; semiconductor junctions; silicon; surface treatment; transmission electron microscopy; wafer bonding; SAB based Si-Si junctions; Si; TEM observation; amorphous like layer; annealing temperature dependence; current-voltage measurement; surface-activated bonding; temperature 1000 degC; Annealing; Bonding; Junctions; Silicon; Substrates; Temperature; Temperature measurement;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886191
