Title :
Annealing characteristics of p+-Si/n-4H-SiC junctions by using surface-activated bonding
Author :
Nishida, Shuichi ; Liang, Justin ; Hayashi, Teruaki ; Morimoto, Masayuki ; Shigekawa, Naoteru ; Arai, Manabu
Author_Institution :
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
Abstract :
The effects of annealing on p+-Si/n-4H-SiC heterojunctons fabricated by using surface-activated bonding (SAB) were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. I-V characteristics were improved and the flat-band voltages extracted from C-V characteristics were smaller by annealing at higher temperatures.
Keywords :
annealing; capacitance; elemental semiconductors; integrated circuit bonding; p-n heterojunctions; silicon; silicon compounds; surface treatment; three-dimensional integrated circuits; wide band gap semiconductors; Si-SiC; annealing; capacitance-voltage measurements; current-voltage measurements; flat-band voltages; p+-Si/n-4H-SiC junctions; surface-activated bonding; Annealing; Bonding; Capacitance-voltage characteristics; Junctions; Silicon carbide; Temperature; Temperature measurement;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886193
