SiC wafer bonding by modified suface activated bonding method

Author

Fengwen Mu ; Suga, Takashi ; Fujino, Masahisa ; Takahashi, Y. ; Nakazawa, H. ; Iguchi, Kenichi

Author_Institution

Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2014

fDate

15-16 July 2014

Firstpage

55

Lastpage

55

Abstract

3-inch 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. The interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface. Furthermore, to verify the stability of the interface, the interface changes after annealing were studied.

Keywords

annealing; interface structure; silicon compounds; tensile strength; voids (solid); wafer bonding; wide band gap semiconductors; 4H-SiC wafer bonding; SiC; annealing; interface structure; modified suface activated bonding method; temperature 293 K to 298 K; tensile strength; time 300 s; voids; Annealing; Bonding; Educational institutions; Iron; Silicon; Silicon carbide; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4799-5260-1

Type

conf

DOI

10.1109/LTB-3D.2014.6886194

Filename

6886194