Title :
100 mm diameter mono-crystalline 4H-SiC/polycrystalline-SiC bonded wafers fabricated by SAB for power device
Author :
Yagi, Keita ; Hatta, Naoki ; Sakata, Tsuyoshi ; Minami, Akiyuki ; Kawahara, Toshio ; Uchida, Hironaga ; Imaoka, Keiji ; Okuda, Takafumi ; Suda, Jun ; Kurashima, Yuichi ; Takagi, Hiroyuki
Author_Institution :
SICOXS Co., Tokyo, Japan
Abstract :
We have developed 100mm in diameter 4H-SiC/poly-SiC bonded wafer by SAB method. The SiC bonded wafer demonstrated an excellent thermal stability against device processing temperature. SBDs fabricated on the SiC bonded wafer exhibited good I-V characteristics. These results suggest that it is a promising alternative wafer for SiC power device.
Keywords :
power semiconductor devices; silicon compounds; surface treatment; thermal stability; three-dimensional integrated circuits; wafer bonding; wide band gap semiconductors; I-V characteristics; SAB method; SiC; SiC power device; device processing temperature; monocrystalline 4H-SiC-polycrystalline-SiC bonded wafers; size 100 mm; surface-activated bonding; thermal stability; Annealing; Availability; Fabrication; Schottky barriers; Silicon carbide; Temperature; Thermal stability;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886195
