Low temperature metal bonding for 3D and power device packaging

Author

Di Cioccio, L. ; Beilliard, Y. ; Mermoz, S. ; Estevez, R. ; Coudrain, P. ; Moreau, Sandrine ; Widiez, J.

Author_Institution

Univ. Grenoble Alpes, Grenoble, France

fYear

2014

fDate

15-16 July 2014

Firstpage

59

Lastpage

59

Abstract

Low temperature copper-copper direct bonding at ambient air on plain and patterned surfaces was developed at CEA LETI. In this paper we will review this bonding in terms of simulation models, process technology, electrical characterization and reliability. Wafer to wafer, die to wafer and self-assembly will be analyzed.

Keywords

circuit simulation; copper; integrated circuit bonding; integrated circuit modelling; integrated circuit packaging; integrated circuit reliability; power integrated circuits; power semiconductor devices; self-assembly; semiconductor device packaging; three-dimensional integrated circuits; 3D packaging; Cu; ambient air; die-wafer assembly; electrical characterization; low temperature copper-copper direct bonding; low temperature metal bonding; patterned surfaces; plain surfaces; power device packaging; process technology; reliability; self-assembly; simulation models; wafer-wafer assembly; Atmospheric modeling; Bonding; Copper; Packaging; Semiconductor device modeling; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on

Conference_Location

Tokyo

Print_ISBN

978-1-4799-5260-1

Type

conf

DOI

10.1109/LTB-3D.2014.6886196

Filename

6886196