DocumentCode :
1792639
Title :
Low temperature metal bonding for 3D and power device packaging
Author :
Di Cioccio, L. ; Beilliard, Y. ; Mermoz, S. ; Estevez, R. ; Coudrain, P. ; Moreau, Sandrine ; Widiez, J.
Author_Institution :
Univ. Grenoble Alpes, Grenoble, France
fYear :
2014
fDate :
15-16 July 2014
Firstpage :
59
Lastpage :
59
Abstract :
Low temperature copper-copper direct bonding at ambient air on plain and patterned surfaces was developed at CEA LETI. In this paper we will review this bonding in terms of simulation models, process technology, electrical characterization and reliability. Wafer to wafer, die to wafer and self-assembly will be analyzed.
Keywords :
circuit simulation; copper; integrated circuit bonding; integrated circuit modelling; integrated circuit packaging; integrated circuit reliability; power integrated circuits; power semiconductor devices; self-assembly; semiconductor device packaging; three-dimensional integrated circuits; 3D packaging; Cu; ambient air; die-wafer assembly; electrical characterization; low temperature copper-copper direct bonding; low temperature metal bonding; patterned surfaces; plain surfaces; power device packaging; process technology; reliability; self-assembly; simulation models; wafer-wafer assembly; Atmospheric modeling; Bonding; Copper; Packaging; Semiconductor device modeling; Three-dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
Type :
conf
DOI :
10.1109/LTB-3D.2014.6886196
Filename :
6886196
Link To Document :
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