DocumentCode :
1792641
Title :
Metal-assisted hermetic wafer-level packaging
Author :
Chagnon, Dany ; Isik, Dilek ; Levesque, Pierre ; Lewis, Frank ; Caza, Marie-Eve ; Xuan Than Le ; Poirier, Jean-Sebastien ; Michel, Damien ; Larger, Ronan ; Moutanabbir, Oussama
Author_Institution :
Dept. de Genie Phys., Ecole Polytech. de Montreal, Montréal, QC, Canada
fYear :
2014
fDate :
15-16 July 2014
Firstpage :
60
Lastpage :
60
Abstract :
This work main focus is the use of Gold thermocompression and gold-tin transient liquid phase bonding to achieve a hermetic wafer-level packaging. Herein, we describe the major advantages and difficulties that characterized these two bonding processes at design and materials levels. We also provide detailed in- and ex- situ studies of morphological and thermal stabilities of the multi-layer stacks utilized to prepare the wafers to be bonded. These investigations also set the ground to optimize the bonding conditions in order to enable high-quality bonding interfaces.
Keywords :
gold; gold alloys; lead bonding; thermal stability; three-dimensional integrated circuits; tin alloys; wafer level packaging; Au; AuSn; gold thermocompression; gold-tin transient liquid phase bonding; high-quality bonding interfaces; metal-assisted hermetic wafer-level packaging; multilayer stack morphology; thermal stabilities; Bonding; Gold; Scanning electron microscopy; Thermal stability; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
Type :
conf
DOI :
10.1109/LTB-3D.2014.6886197
Filename :
6886197
Link To Document :
بازگشت