Title :
Epitaxially intergrated power efficient switch for high power laser pulse generation in semiconductor heterostructures of 900 nm wavelength
Author :
Slipchenko, Sergey O. ; Podoskin, Aleksandr A. ; Rozhkov, Alexsander V. ; Pikhtin, Nikita A. ; Tarasov, Ilya S. ; Bagaev, Timur A. ; Zverkov, M.V. ; Konyaev, V.P. ; Kurniavko, Y.V. ; Ladugin, Maxim A. ; Marmalyuk, Aleksandr A. ; Padalitsa, Anatoliy A. ; S
Author_Institution :
Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
New type of high power laser pulse generator of ns-range duration based on epitaxial intergration of laser heterostructure into thyristor heterostructure has been investigated. Generation of laser pulse of 28W amplitude is done by applying a control current pulse with amplitude of 3.4 A/cm2 only. The minimal energy of control signal reaches 1,4 nJ.
Keywords :
optical pulse generation; optical switches; semiconductor heterojunctions; semiconductor lasers; control current pulse; epitaxially integrated power efficient switch; high power laser pulse generation; minimal control signal energy; power 28 W; semiconductor heterostructures; thyristor heterostructure; wavelength 900 nm; Epitaxial growth; Pump lasers; laser-thyristor; pulse laser diode;
Conference_Titel :
Laser Optics, 2014 International Conference
Conference_Location :
Saint Petersburg
Print_ISBN :
978-1-4799-3884-1
DOI :
10.1109/LO.2014.6886288
