Pulsed electron beam pumped laser based on ZnCdSe MQW structure with high threshold of catastrophic degradation

Author

Zverev, M.M. ; Gamov, N.A. ; Zhdanova, E.V. ; Peregoudov, D.V. ; Studionov, V.B. ; Gronin, S.V. ; Sedova, I.V. ; Sorokin, S.V. ; Ivanov, S.V.

Author_Institution

Moscow State Tech. Univ. of Radio Eng., Electron. & Automations, Moscow, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

1

Lastpage

1

Abstract

The parameters of electron beam pumped RT lasers based on ZnSe-containing MQW structures were studied. Maximum value of output pulse power as high as 82W per laser facet has been demonstrated. Both the high value of P_max and the threshold of catastrophic degradation in comparison with the earlier results could be explained by the relatively low level of defect density (~10⁴ cm^-2) in the laser structure.

Keywords

II-VI semiconductors; electron beams; laser beams; optical pumping; quantum well lasers; zinc compounds; ZnCdSe; ZnCdSe MQW structure; ZnSe; ZnSe-containing MQW structures; catastrophic degradation threshold; defect density; electron beam pumped RT lasers; laser structure; output pulse power; power 82 W; pulsed electron beam pumped laser; temperature 293 K to 298 K; MQW-structures; electron-beam pumped lasers; superlattice waveguide;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser Optics, 2014 International Conference

Conference_Location

Saint Petersburg

Print_ISBN

978-1-4799-3884-1

Type

conf

DOI

10.1109/LO.2014.6886304

Filename

6886304