Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology

Author

Zviagintsev, Alex ; Brouk, Igor ; Bloom, Ilan ; Nemirovsky, Yael

Author_Institution

Technion - Israel Inst. of Technol., Haifa, Israel

fYear

2014

fDate

3-5 Dec. 2014

Firstpage

1

Lastpage

5

Abstract

Novel uncooled thermal sensor based on a suspended transistor (TMOS) made in standard CMOS-SOI process and released by post-etching, has been developed at Technion. Monolithic ROIC design principles for TMOS IR imagers, based on current and voltage operation modes are presented. Performance analysis of imaging sensors operated either in voltage or current sensing mode, is presented. The major challenges associated with the technology: Very low ratio of signal current or voltage relative to the DC power supply voltage or current, self-heating thermal effects, mismatch and low-frequency noise are discussed.

Keywords

CMOS image sensors; infrared imaging; monolithic integrated circuits; nanoelectromechanical devices; nanosensors; readout electronics; silicon-on-insulator; CMOS-SOI-NEMS technology; DC power supply voltage; TMOS IR imager; Technion; current integrated readout; current operation modes; imaging sensor; monolithic ROIC design principle; post-etching; self-heating thermal effects; suspended transistor; uncooled passive IR sensors; uncooled thermal sensor; voltage integrated readout; voltage operation modes; Bridge circuits; Noise; Temperature measurement; Temperature sensors; Transistors; CMOS-SOI-NEMS technology; TMOS imager; current response; uncooled IR sensing; voltage response;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical & Electronics Engineers in Israel (IEEEI), 2014 IEEE 28th Convention of

Conference_Location

Eilat

Print_ISBN

978-1-4799-5987-7

Type

conf

DOI

10.1109/EEEI.2014.7005758

Filename

7005758