DocumentCode
1793286
Title
High-speed InGaAs photodetectors with low dark current selectively grown on SOI substrate
Author
Yu Geng ; Shaoqi Feng ; Poon, Andrew W. ; Kei May Lau
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear
2014
fDate
9-13 March 2014
Firstpage
1
Lastpage
3
Abstract
We report selective growth of high crystalline quality InGaAs photodetectors (PDs) with optimized InP/GaAs buffers on patterned SOI substrates by MOCVD. Both waveguide and normal-incidence PDs show low dark current and high-speed performance.
Keywords
III-V semiconductors; MOCVD; buffer layers; dark conductivity; gallium arsenide; indium compounds; photodetectors; semiconductor growth; InGaAs; InP-GaAs; InP/GaAs buffers; MOCVD; Si; high-speed photodetectors; low dark current; normal-incidence photodetectors; patterned SOI substrates; waveguide; Dark current; Gallium arsenide; Indium phosphide; Optical waveguides; Photodetectors; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference and Exhibition (OFC), 2014
Conference_Location
San Francisco, CA
Print_ISBN
978-1-5575-2994-7
Type
conf
DOI
10.1364/OFC.2014.M2G.2
Filename
6886548
Link To Document