Title :
Waveguide Ge/Si avalanche photodetector with a unique low-height-profile device structure
Author :
Tsung-Yang Liow ; Ning Duan ; Lim, Andy Eu-Jin ; Xiaoguang Tu ; Mingbin Yu ; Guo-Qiang Lo
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
We present a SACM waveguide Ge/Si APD capable of 25 Gb/s operation at 1.3 μm, with a unique low-height-profile structure which enables low dark current. A maximum sensitivity improvement of ~9 dBm can be obtained.
Keywords :
avalanche photodiodes; elemental semiconductors; germanium; optical waveguides; photodetectors; silicon; Ge-Si; bit rate 25 Gbit/s; low dark current; low-height-profile device structure; maximum sensitivity; separate-absorption-charge-multiplication device; waveguide Ge/Si avalanche photodetector; wavelength 1.3 mum; Absorption; Bandwidth; Dark current; Electric fields; Gain; Optical waveguides; Silicon;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2014
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-5575-2994-7
DOI :
10.1364/OFC.2014.M2G.6
