Title :
An analytical calculation of the silicon limit for two dimensional RESURF drift layers
Author :
Awad, Maher ; Shapira, Shye
Author_Institution :
Electr. Eng. Dept., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
A simple physics-based analytic model for the silicon limit (optimal specific on-resistance) of a two dimensional (2-D) reduced surface field (RESURF) drift layer is calculated. The silicon limit of sRon (specific on-resistance) is found to be 60% of the one dimensional (1-D) limit. The model calculates the design parameters of the optimal drift layers required to reach the silicon limit and allows introducing constraints such as drift layer thickness for large voltage devices.
Keywords :
elemental semiconductors; power semiconductor diodes; semiconductor device models; silicon; 2D reduced surface field; Si; one dimensional 1D limit; optimal drift layers; optimal specific on-resistance; silicon limit; simple physics-based analytic model; two dimensional RESURF drift layers; Analytical models; Approximation methods; Doping; Electric fields; Junctions; Mathematical model; Silicon; 2-D silicon limit; Device optimization; RESURF; power devices; sRon;
Conference_Titel :
Electrical & Electronics Engineers in Israel (IEEEI), 2014 IEEE 28th Convention of
Conference_Location :
Eilat
Print_ISBN :
978-1-4799-5987-7
DOI :
10.1109/EEEI.2014.7005853
