An analytical calculation of the silicon limit for two dimensional RESURF drift layers

A simple physics-based analytic model for the silicon limit (optimal specific on-resistance) of a two dimensional (2-D) reduced surface field (RESURF) drift layer is calculated. The silicon limit of sRon (specific on-resistance) is found to be 60% of the one dimensional (1-D) limit. The model calculates the design parameters of the optimal drift layers required to reach the silicon limit and allows introducing constraints such as drift layer thickness for large voltage devices.