Title :
Strain-induced enhancement of free-carrier effects in SiGe for optical modulator and VOA applications
Author :
Younghyun Kim ; Takenaka, Mitsuru ; Osada, Takenori ; Hata, Masaharu ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
Enhanced free-carrier effects in strained SiGe enable high-efficiency VOA, exhibiting 1/3 of power consumption of Si. The broadband operation from 1.34 to 1.64 μm and error-free operation for 18-dBm 12.5 Gb/s optical signal are obtained.
Keywords :
Ge-Si alloys; internal stresses; optical attenuators; optical modulation; semiconductor materials; SiGe; VOA applications; bit rate 12.5 Gbit/s; broadband operation; error-free operation; free-carrier effects; optical modulator; optical signal; power consumption; strain-induced enhancement; strained SiGe; wavelength 1.34 mum to 1.64 mum; Attenuation; Modulation; Optical attenuators; Optical device fabrication; Optical waveguides; Silicon; Silicon germanium;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2014
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-5575-2994-7
DOI :
10.1364/OFC.2014.Th1C.4
