Author :
Ji, H.-C. ; Cho, K.S. ; Lee, B.S. ; Cho, K.Y. ; Choi, S.H. ; Kim, Ji H. ; Shin, Y.H. ; Kim, S.G. ; Lee, S.Y. ; Byun, H.I. ; Parmar, S. ; Nejadmalayeri, A.H. ; Kim, D.H. ; Bok, J.K. ; Park, Y.S. ; Shin, D.J. ; Joe, I.S. ; Kuh, B.J. ; Kim, B.S. ; Kim, K.C.
Author_Institution :
Semicond. R&D Center, Samsung Electron., Hwasung, South Korea
Abstract :
We present BOX-less waveguide Ge PD for bulk-Si optical interface platform. Despite of defective crystalline of Si-core layer, it shows low dark current (350 nA), high responsivity (1.05 A/W), and high speed operation (25 Gb/s).
Keywords :
elemental semiconductors; germanium; integrated optics; optical waveguides; photodiodes; silicon; BOX-less waveguide Ge PD; Ge; Si; Si-core layer; bit rate 25 Gbit/s; bulk-Si based silicon photonic platform; bulk-Si optical interface platform; current 350 nA; defective crystalline; high speed operation; low dark current; responsivity; Integrated optics; Optical coupling; Optical imaging; Optical waveguides; Silicon; Substrates; Voltage measurement;
