DocumentCode
1793838
Title
10 Gb/s bit error free performance of a monolithic silicon avalanche waveguide-integrated photodetector
Author
Ackert, Jason J. ; Karar, A.S. ; Cartledge, J.C. ; Jessop, Paul E. ; Knights, Andrew P.
Author_Institution
Dept. of Eng. Phys., McMaster Univ., Hamilton, ON, Canada
fYear
2014
fDate
9-13 March 2014
Firstpage
1
Lastpage
3
Abstract
Bit error free operation of a waveguide-integrated monolithic silicon avalanche photodiode is obtained for 10 Gb/s. The infrared photoresponse is enabled by the 1.8 μm absorption peak of the silicon divacancy defect, introduced via ion implantation.
Keywords
avalanche photodiodes; elemental semiconductors; infrared detectors; ion implantation; optical waveguides; photodetectors; silicon; Si; absorption peak; bit error free performance; bit rate 10 Gbit/s; infrared photoresponse; ion implantation; monolithic silicon avalanche waveguide-integrated photodetector; waveguide-integrated monolithic silicon avalanche photodiode; wavelength 1.8 mum; Bit error rate; Detectors; Fabrication; Optical waveguides; Photodiodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference and Exhibition (OFC), 2014
Conference_Location
San Francisco, CA
Print_ISBN
978-1-5575-2994-7
Type
conf
DOI
10.1364/OFC.2014.Th4C.3
Filename
6886827
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