Title :
Development of Si photonics technology: Ge/Si avalanche photodiode for PON applications
Author :
Mengyuan Huang ; Pengfei Cai ; Liangbo Wang ; Tuo Shi ; Wang Chen ; Su Li ; Guanghui Hou ; Ching-yin Hong ; Dong Pan
Author_Institution :
SiFotonics Technol. Co. Ltd., Woburn, MA, USA
Abstract :
We accomplished the first mass-production of Ge/Si avalanche photodiode (APD) for FTTx applications in a standard CMOS foundry. Our APDs satisfy sensitivity requirements of 10G PON (both OLT and ONU sides) applications within -5°C~75°C.
Keywords :
CMOS integrated circuits; avalanche photodiodes; elemental semiconductors; germanium; integrated optoelectronics; passive optical networks; silicon; FTTx applications; Ge-Si; OLT sides; ONU sides; PON applications; Si photonics technology; avalanche photodiode; sensitivity; standard CMOS foundry; Avalanche photodiodes; Dark current; Optical sensors; Passive optical networks; Sensitivity; Silicon; Temperature sensors;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2014
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-5575-2994-7
DOI :
10.1364/OFC.2014.Tu2C.2
