• DocumentCode
    1793940
  • Title

    Development of Si photonics technology: Ge/Si avalanche photodiode for PON applications

  • Author

    Mengyuan Huang ; Pengfei Cai ; Liangbo Wang ; Tuo Shi ; Wang Chen ; Su Li ; Guanghui Hou ; Ching-yin Hong ; Dong Pan

  • Author_Institution
    SiFotonics Technol. Co. Ltd., Woburn, MA, USA
  • fYear
    2014
  • fDate
    9-13 March 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We accomplished the first mass-production of Ge/Si avalanche photodiode (APD) for FTTx applications in a standard CMOS foundry. Our APDs satisfy sensitivity requirements of 10G PON (both OLT and ONU sides) applications within -5°C~75°C.
  • Keywords
    CMOS integrated circuits; avalanche photodiodes; elemental semiconductors; germanium; integrated optoelectronics; passive optical networks; silicon; FTTx applications; Ge-Si; OLT sides; ONU sides; PON applications; Si photonics technology; avalanche photodiode; sensitivity; standard CMOS foundry; Avalanche photodiodes; Dark current; Optical sensors; Passive optical networks; Sensitivity; Silicon; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communications Conference and Exhibition (OFC), 2014
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-5575-2994-7
  • Type

    conf

  • DOI
    10.1364/OFC.2014.Tu2C.2
  • Filename
    6886882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1793940