DocumentCode :
1794429
Title :
Low driving voltage (< 400mVpp) electro-absorption modulator laterally integrated with VCSEL
Author :
Dalir, Hamed ; Takahashi, Y. ; Koyama, Fumio
Author_Institution :
Photonics Integration Syst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
fYear :
2014
fDate :
9-13 March 2014
Firstpage :
1
Lastpage :
3
Abstract :
A compact (8μm long) electro-absorption slow-light modulator is laterally integrated with a 980nm InGaAs VCSEL incorporating a bow-tie-shape oxide aperture. We demonstrate a low driving voltage below 400mVpp and large signal modulation up to 25Gbps.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; slow light; surface emitting lasers; InGaAs; VCSEL; bow-tie-shape oxide aperture; compact electroabsorption slow-light modulator; low-driving voltage electroabsorption modulator; signal modulation; size 8 mum; size 980 nm; Bandwidth; Cavity resonators; Current measurement; Modulation; Optical waveguides; Photonics; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2014
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-5575-2994-7
Type :
conf
DOI :
10.1364/OFC.2014.W4C.3
Filename :
6887171
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1794429
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