• DocumentCode
    1794429
  • Title

    Low driving voltage (< 400mVpp) electro-absorption modulator laterally integrated with VCSEL

  • Author

    Dalir, Hamed ; Takahashi, Y. ; Koyama, Fumio

  • Author_Institution
    Photonics Integration Syst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
  • fYear
    2014
  • fDate
    9-13 March 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A compact (8μm long) electro-absorption slow-light modulator is laterally integrated with a 980nm InGaAs VCSEL incorporating a bow-tie-shape oxide aperture. We demonstrate a low driving voltage below 400mVpp and large signal modulation up to 25Gbps.
  • Keywords
    III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; slow light; surface emitting lasers; InGaAs; VCSEL; bow-tie-shape oxide aperture; compact electroabsorption slow-light modulator; low-driving voltage electroabsorption modulator; signal modulation; size 8 mum; size 980 nm; Bandwidth; Cavity resonators; Current measurement; Modulation; Optical waveguides; Photonics; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communications Conference and Exhibition (OFC), 2014
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-5575-2994-7
  • Type

    conf

  • DOI
    10.1364/OFC.2014.W4C.3
  • Filename
    6887171
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1794429