Title :
High performance 1.3µm InAs quantum dot lasers epitaxially grown on silicon
Author :
Liu, Alan Y. ; Chong Zhang ; Snyder, Andrew ; Lubychev, Dimitri ; Fastenau, Joel M. ; Liu, Amy W. K. ; Gossard, Arthur C. ; Bowers, John E.
Author_Institution :
Mater. Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
Abstract :
We demonstrate 1.3 μm InAs quantum dot lasers on silicon by molecular beam epitaxial growth with low thresholds (16 mA), high output power (>50 mW), high T0 (>200 K), and high temperature lasing (115 °C).
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; quantum dot lasers; semiconductor epitaxial layers; semiconductor growth; silicon; InAs; Si; current 16 mA; high T0; high output power; high temperature lasing; low thresholds; molecular beam epitaxial growth; quantum dot lasers; temperature 115 degC; wavelength 1.3 mum; Gallium arsenide; Quantum dot lasers; Silicon; Substrates; Surface emitting lasers; Waveguide lasers;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2014
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-5575-2994-7
DOI :
10.1364/OFC.2014.W4C.5
